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TC4426 TC4427 TC4428 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
FEATURES
s s s s s s High Peak Output Current ............................... 1.5A Wide Operating Range .......................... 4.5V to 18V High Capacitive Load Drive Capability .......................... 1000pF in 25nsec Short Delay Time .............................. < 40nsec Typ. Consistent Delay Times With Changes in Supply Voltage Low Supply Current -- With Logic "1" Input .................................... 4mA -- With Logic "0" Input ................................. 400A Low Output Impedance ....................................... 7 Latch-Up Protected ............. Will Withstand >0.5A Reverse Current ................................. Down to - 5V Input Will Withstand Negative Inputs ESD Protected .....................................................4kV Pinout Same as TC426/TC427/TC428
GENERAL DESCRIPTION
The TC4426/4427/4428 are improved versions of the earlier TC426/427/428 family of buffer/drivers (with which they are pin compatible). They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4kV of electrostatic discharge. As MOSFET drivers, the TC4426/4427/4428 can easily switch 1000pF gate capacitances in under 30nsec, and provide low enough impedances in both the ON and OFF states to ensure the MOSFET's intended state will not be affected, even by large transients. Other compatible drivers are the TC4426A/27A/28A. These drivers have matched input to output leading edge and falling edge delays, tD1 and tD2, for processing short duration pulses in the 25 nsec range. They are pin compatible with the TC4426/27/28. FUNCTIONAL BLOCK DIAGRAM
VDD
INVERTING OUTPUTS
s s s s s
ORDERING INFORMATION
Part No.
TC4426COA TC4426CPA TC4426EOA TC4426EPA TC4426MJA TC4427COA TC4427CPA TC4427EOA TC4427EPA TC4427MJA TC4428COA TC4428CPA TC4428EOA TC4428EPA TC4428MJA
Package
8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP
Temperature Range
0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C
300 mV
OUTPUT
NONINVERTING OUTPUTS
INPUT 4.7V
TC4426/TC4427/TC4428
GND EFFECTIVE INPUT C = 12 pF NOTES: 1.TC4426 has 2 inverting drivers; TC4427 has 2 noninverting drivers. 2. TC4428 has one inverting and one noninverting driver. 3. Ground any unused driver input.
(c) 2001 Microchip Technology Inc.
DS21422A
TC4426/7/8-8
10/21/96
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND - 5.0V) Maximum Chip Temperature ................................. +150C Storage Temperature Range ................ - 65C to +150C Lead Temperature (Soldering, 10 sec) ................. +300C Package Thermal Resistance CerDIP RJ-A ................................................ 150C/W CerDIP RJ-C .................................................. 50C/W PDIP RJ-A ................................................... 125C/W PDIP RJ-C ..................................................... 42C/W SOIC RJ-A ................................................... 155C/W SOIC RJ-C ..................................................... 45C/W PIN CONFIGURATIONS
NC 1 IN A 2 GND 3 IN B 4 8 NC 7 OUT A NC 1 IN A 2 GND 3 IN B 4
Operating Temperature Range C Version ............................................... 0C to +70C E Version .......................................... - 40C to +85C M Version ....................................... - 55C to +125C Package Power Dissipation (TA 70C) Plastic .............................................................730mW CerDIP ............................................................800mW SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
8 NC 7 OUT A NC 1 IN A 2 GND 3 IN B 4 2 7 8 NC 7 OUT A
TC4426
6 VDD 5 OUT B
TC4427
6 VDD 5 OUT B
TC4428
6 VDD 5 OUT B
2,4
7,5
2,4
7,5 4 5
INVERTING NC = NO INTERNAL CONNECTION NOTE: SOIC pinout is identical to DIP.
NONINVERTING DIFFERENTIAL
ELECTRICAL CHARACTERISTICS: TA = +25C with 4.5V VDD 18V, unless otherwise specified.
Symbol
Input VIH VIL IIN Output VOH VOL RO IPK IREV
Parameter
Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current High Output Voltage Low Output Voltage Output Resistance Peak Output Current Latch-Up Protection Withstand Reverse Current
Test Conditions
Min
2.4 -- -1 VDD - 0.025 -- -- -- > 0.5
Typ
-- -- -- -- -- 7 1.5 --
Max
-- 0.8 1 -- 0.025 10 -- --
Unit
V V A V V A A
0V VIN VDD
VDD = 18V, IO = 10mA Duty Cycle 2%, t 30sec Duty Cycle 2% t 30 sec Figure 1 Figure 1 Figure 1 Figure 1 VIN = 3V (Both Inputs) VIN = 0V (Both Inputs)
2
Switching Time (Note 1) tR Rise Time tF Fall Time tD1 Delay Time tD2 Delay Time Power Supply IS Power Supply Current
-- -- -- -- -- --
19 19 20 40 -- --
30 30 30 50 4.5 0.4
nsec nsec nsec nsec mA mA
NOTE: 1. Switching times are guaranteed by design.
TC4426/7/8-8 10/21/96
(c) 2001 Microchip Technology Inc.
DS21422A
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428
ELECTRICAL CHARACTERISTICS: Specifications measured over operating temperature range with 4.5V
VDD 18V, unless otherwise specified. Test Conditions Symbol
Input VIH VIL IIN Output VOH VOL RO IPK IREV
Parameter
Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current High Output Voltage Low Output Voltage Output Resistance Peak Output Current Latch-Up Protection Withstand Reverse Current
Min
2.4 -- - 10 VDD - 0.025 -- -- -- > 0.5
Typ
-- -- -- -- -- 9 1.5 --
Max
-- 0.8 10 -- 0.025 12 -- --
Unit
V V A V V A A
0V VIN VDD
VDD = 18V, IO = 10mA Duty Cycle 2%, t 300sec Duty Cycle 2% t 300sec Figure 1 Figure 1 Figure 1 Figure 1 VIN = 3V (Both Inputs) VIN = 0V (Both Inputs)
Switching Time (Note 1) tR Rise Time tF Fall Time tD1 Delay Time tD2 Delay Time Power Supply IS Power Supply Current
-- -- -- -- -- --
-- -- -- -- -- --
40 40 40 60 8 0.6
nsec nsec nsec nsec mA mA
NOTE: 1. Switching times are guaranteed by design.
-8 10 9 8 7 6 5
Crossover Energy Loss
+5V INPUT 0V 10%
90%
A * sec
4 3
VDD= 18V
4.7 F 0.1 F
tD1
90%
tF
tD2
VDD
tR
90%
OUTPUT
6
2
INPUT
2,4
5,7
0V
10%
10%
OUTPUT CL = 1000 pF
Inverting Driver
+5V
-9 10
90%
4
6
8
10 12 VDD
14
16
18
3
INPUT 0V
VDD
INPUT: 100 kHz, square wave, tRISE = tFALL 10ns
10% 90% 90% tD2 10%
Thermal Derating Curves
1600 1400 8 Pin DIP 8 Pin CerDIP 1000 800 8 Pin SOIC 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120
tD1
OUTPUT 0V 10%
tR
tF
MAX. POWER (mW)
1200
Noninverting Driver
Figure 1. Switching Time Test Circuit NOTE: The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4.
AMBIENT TEMPERATURE (C)
(c) 2001 Microchip Technology Inc.
DS21422A
3
TC4426/7/8-8
10/21/96
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
100 100
Fall Time vs. Supply Voltage
2200 pF
80
2200 pF
80
TA = 25C
TA = 25C
1500 pF
tRISE (nsec)
60
tFALL (nsec)
1500 pF
60
1000 pF
40
1000 pF
40
470 pF
20 20
470 pF 100 pF
100 pF
0 0
4
6
8
10
12 VDD
14
16
18
4
6
8
10
12 VDD
14
16
18
Rise TIme vs. Capacitive Load
100 100
Fall TIme vs. Capacitive Load
TA = 25C
80 5V
TA = 25C
80
5V
tRISE (nsec)
60
10V 15V
tFALL (nsec)
60
10V 15V
40
40
20
20
0 100
1000 CLOAD (pF)
10,000
0 100
1000 CLOAD (pF)
10,000
Rise and Fall Times vs. Temperature
60
C LOAD = 1000 pF VDD = 17.5V
Propagation Delay vs. Supply Voltage
60
CLOAD = 1000 pF
t D2
50
DELAY TIME (nsec)
50
TIME (nsec)
40
40
TA = 25C
tD1
30 tFALL 20 tRISE
30
20
10 -55 -35 -15
10
5 25 45 65 85 TEMPERATURE (C)
105 125
4
6
8
10
12 VDD
14
16
18
TC4426/7/8-8
10/21/96
4
(c) 2001 Microchip Technology Inc.
DS21422A
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428
TYPICAL CHARACTERISTICS (Cont.)
Effect of Input Amplitude on Delay Time
60 C LOAD = 1000 pF 50 VDD = 10V 50
Propagation Delay Time vs. Temperature
60 VDD = 18V VLOAD= 1000 pF t D2 40 t D1
DELAY TIME (nsec)
40 t D2 30
DELAY TIME (nsec)
30
20
t D1
20
10
0
2
4 6 VDRIVE (V)
8
10
10 -55 -35 -15
5
25 45 TA (C)
65
85
105 125
Quiescent Supply Current vs. Voltage
TA = +25C
IQUIESCENT (mA)
Quiescent Supply Current vs. Temperature
4.0
V DD = 18V
3.5
IQUIESCENT (mA)
BOTH INPUTS = 1 1
3.0
BOTH INPUTS = 1
2.5 BOTH INPUTS = 0 0.1 4 6 8 10 12 VDD 14 16 18 2.0 -55 -35 -15
5
25 45 TA (C)
65
85
105 125
High-State Output Resistance
25 25
Low-State Output Resistance
20
RDS(ON) () RDS(ON) ()
20 WORST CASE @ TJ = +150C WORST CASE @ TJ = +150C 15
15
10 8 5
TYP @ TA = +25C
10 8 5
TYP @ TA = +25C
4
6
8
10 VDD
12
14
16
18
4
6
8
10
12 VDD
14
16
18
(c) 2001 Microchip Technology Inc.
DS21422A
5
TC4426/7/8-8
10/21/96
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428
SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)
Supply Current vs. Capacitive Load
60 VDD = 18V 50 900 kHz 2 MHz 50 60 VDD = 18V 1000 pF 2200 pF
Supply Current vs. Frequency
ISUPPLY (mA)
ISUPPLY (mA)
40 30 20 10 0 100 200 kHz 20 kHz 600 kHz
40 100 pF 30 20 10 0
1000 CLOAD (pF)
10,000
10
100 1000 FREQUENCY (kHz)
Supply Current vs. Capacitive Load
60 VDD = 12V 50 2 MHz 50 60
Supply Current vs. Frequency
VDD = 12V 2200 pF
ISUPPLY (mA)
ISUPPLY (mA)
40 30 900 kHz 20 10 0 100 200 kHz 20 kHz 1000 CLOAD (pF) 10,000 600 kHz
40 30 20 10 0 10
1000 pF
100 pF
100 1000 FREQUENCY (kHz)
Supply Current vs. Capacitive Load
60 VDD = 6V 50 50 60
Supply Current vs. Frequency
VDD = 6V
ISUPPLY (mA)
ISUPPLY (mA)
40 30 20 10 0 100 900 kHz 600 kHz 200 kHz 20 kHz 1000 CLOAD (pF) 10,000
40 30 20 10 0 10 100 1000 FREQUENCY (kHz)
(c) 2001 Microchip Technology Inc. DS21422A
2 MHz
2200 pF 1000 pF
100 pF
TC4426/7/8-8
10/21/96
6
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428
PACKAGE DIMENSIONS 8-Pin CerDIP
.110 (2.79) .090 (2.29) PIN 1
.300 (7.62) .230 (5.84)
.055 (1.40) MAX. .400 (10.16) .370 (9.40) .200 (5.08) .160 (4.06) .200 (5.08) .125 (3.18)
.020 (0.51) MIN. .320 (8.13) .290 (7.37) .040 (1.02) .020 (0.51) .015 (0.38) .008 (0.20) .400 (10.16) .320 (8.13) .065 (1.65) .020 (0.51) .045 (1.14) .016 (0.41)
.150 (3.81) MIN.
3 MIN.
8-Pin Plastic DIP
PIN 1
.260 (6.60) .240 (6.10)
.045 (1.14) .030 (0.76) .400 (10.16) .348 (8.84) .200 (5.08) .140 (3.56) .150 (3.81) .115 (2.92)
.070 (1.78) .040 (1.02)
.310 (7.87) .290 (7.37)
.040 (1.02) .020 (0.51)
.015 (0.38) .008 (0.20) .400 (10.16) .310 (7.87)
3 MIN.
.110 (2.79) .090 (2.29)
.022 (0.56) .015 (0.38)
Dimensions: inches (mm) 7
(c) 2001 Microchip Technology Inc.
DS21422A
TC4426/7/8-8
10/21/96
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428
PACKAGE DIMENSIONS Cont.) 8-Pin SOIC
.157 (3.99) .150 (3.81)
.244 (6.20) .228 (5.79)
.050 (1.27) TYP.
.197 (5.00) .189 (4.80) .069 (1.75) .053 (1.35) .020 (0.51) .010 (0.25) .013 (0.33) .004 (0.10) .010 (0.25) .007 (0.18) .050 (1.27) .016 (0.40)
8 MAX.
Dimensions: inches (mm)
TC4426/7/8-8
10/21/96
8
(c) 2001 Microchip Technology Inc.
DS21422A
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428
WORLDWIDE SALES AND SERVICE
AMERICAS
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01/09/01
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All rights reserved. (c) 2001 Microchip Technology Incorporated. Printed in the USA. 1/01
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchipis products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, except as maybe explicitly expressed herein, under any intellectual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. in the U.S.A. and other countries. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.
(c) 2001 Microchip Technology Inc.
DS21422A
9
TC4426/7/8-8
10/21/96

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